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1

Very high growth rate of 4H-SiC epilayers using the chlorinated precursor methyltrichlorosilane (MTS)

H. Pedersen, S. Leone, A. Henry, F.C. Beyer, V. Darakchieva, E. Janzén

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 718 KB

english, 2007

2

Strain Evolution in High Temperature AlN Buffer Layers for HVPE-GaN Growth

V. Darakchieva, J. Birch, P.P. Paskov, S. Tungasmita, T. Paskova, B. Monemar

Journal:

physica status solidi (a)

Year:

2002

Language:

english

File:

PDF, 113 KB

english, 2002

3

Optical properties of GaAs0.9-xNxSb0.1 alloy films studied by spectroscopic ellipsometry

N. Ben Sedrine, C. Bouhafs, M. Schubert, J.C. Harmand, R. Chtourou, V. Darakchieva

Journal:

Thin Solid Films

Year:

2011

Language:

english

File:

PDF, 716 KB

english, 2011

4

Free-Standing HVPE-GaN Quasi-Substrates: Impurity and Strain Distributions

T. Paskova, P.P. Paskov, V. Darakchieva, E.M. Goldys, U. Södervall, E. Valcheva, B. Arnaudov, B. Monemar

Journal:

physica status solidi (c)

Year:

2003

Language:

english

File:

PDF, 155 KB

english, 2003

5

Structural characteristics and lattice parameters of hydride vapor phase epitaxial GaN free-standing quasisubstrates

Darakchieva, V., Paskova, T., Paskov, P. P., Monemar, B., Ashkenov, N., Schubert, M.

Journal:

Journal of Applied Physics

Year:

2005

Language:

english

File:

PDF, 325 KB

english, 2005

6

Free-charge carrier parameters of n-type, p-type and compensated InN:Mg determined by infrared spectroscopic ellipsometry

Schöche, S., Hofmann, T., Darakchieva, V., Wang, X., Yoshikawa, A., Wang, K., Araki, T., Nanishi, Y., Schubert, M.

Journal:

Thin Solid Films

Year:

2014

Language:

english

File:

PDF, 542 KB

english, 2014

7

Structure and properties of phosphorus-carbide thin solid films

Furlan, A., Gueorguiev, G.K., Czigány, Zs., Darakchieva, V., Braun, S., Correia, M.R., Högberg, H., Hultman, L.

Journal:

Thin Solid Films

Year:

2013

Language:

english

File:

PDF, 1.25 MB

english, 2013

8

High pressure annealing of HVPE GaN free-standing films: redistribution of defects and stress

Paskova, T., Suski, T., Bockowski, M., Paskov, P.P., Darakchieva, V., Monemar, B., Tuomisto, F., Saarinen, K., Ashkenov, N., Schubert, M., Roder, C., Hommel, D.

Journal:

MRS Proceedings

Year:

2004

Language:

english

File:

PDF, 267 KB

english, 2004

9

-gallium oxide single crystals

Schubert, M., Korlacki, R., Knight, S., Hofmann, T., Schöche, S., Darakchieva, V., Janzén, E., Monemar, B., Gogova, D., Thieu, Q.-T., Togashi, R., Murakami, H., Kumagai, Y., Goto, K., Kuramata, A., Ya

Journal:

Physical Review B

Year:

2016

Language:

english

File:

PDF, 9.84 MB

english, 2016

10

2D Transition Metal Carbides (MXenes) for Carbon Capture

Persson, Ingemar, Halim, Joseph, Lind, Hans, Hansen, Thomas W., Wagner, Jakob B., Näslund, Lars-Åke, Darakchieva, Vanya, Palisaitis, Justinas, Rosen, Johanna, Persson, Per O. Å.

Journal:

Advanced Materials

Year:

2018

Language:

english

File:

PDF, 1.50 MB

english, 2018

11

Dielectric function tensor (1.5 eV to 9.0 eV), anisotropy, and band to band transitions of monoclinic β -(Al x Ga 1–x ) 2 O 3 ( x ≤ 0.21) films

Hilfiker, Matthew, Kilic, Ufuk, Mock, Alyssa, Darakchieva, Vanya, Knight, Sean, Korlacki, Rafał, Mauze, Akhil, Zhang, Yuewei, Speck, James, Schubert, Mathias

Journal:

Applied Physics Letters

Year:

2019

Language:

english

File:

PDF, 1.22 MB

english, 2019

12

Anisotropy of the In-Plane Strain in GaN Grown on A-Plane Sapphire

P.P. Paskov, V. Darakchieva, T. Paskova, P.O. Holtz, B. Monemar

Journal:

physica status solidi (b)

Year:

2002

Language:

english

File:

PDF, 190 KB

english, 2002

13

Defect Reduction in HVPE Growth of GaN and Related Optical Spectra

T. Paskova, P.P. Paskov, V. Darakchieva, S. Tungasmita, J. Birch, B. Monemar

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 162 KB

english, 2001

14

Mass Transport Growth and Properties of Hydride Vapour Phase Epitaxy GaN

T. Paskova, P.P. Paskov, E.M. Goldys, V. Darakchieva, U. Södervall, M. Godlewski, M. Zielinski, E. Valcheva, C.F. Carlström, Q. Wahab, B. Monemar

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 310 KB

english, 2001

15

Role of impurities and dislocations for the unintentional n-type conductivity in InN

V. Darakchieva, N.P. Barradas, M.-Y. Xie, K. Lorenz, E. Alves, M. Schubert, P.O.Å. Persson, F. Giuliani, F. Munnik, C.L. Hsiao, L.W. Tu, W.J. Schaff

Journal:

Physica B: Condensed Matter

Year:

2009

Language:

english

File:

PDF, 1.64 MB

english, 2009

16

Characterization of mass-transport grown GaN by hydride vapour-phase epitaxy

T. Paskova, P.P. Paskov, E.M. Goldys, E. Valcheva, V. Darakchieva, U. Södervall, M. Godlewski, M. Zielinski, S. Hautakangas, K. Saarinen, C.F. Carlström, Q. Wahab, B. Monemar

Journal:

Journal of Crystal Growth

Year:

2004

Language:

english

File:

PDF, 677 KB

english, 2004

17

Properties of nonpolar a-plane GaN films grown by HVPE with AlN buffers

T. Paskova, V. Darakchieva, P.P. Paskov, J. Birch, E. Valcheva, P.O.A. Persson, B. Arnaudov, S. Tungasmitta, B. Monemar

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 454 KB

english, 2005

18

Effect of anisotropic strain on phonons in a-plane and c-plane GaN layers

V. Darakchieva, T. Paskova, M. Schubert, P.P. Paskov, H. Arwin, B. Monemar, D. Hommel, M. Heuken, J. Off, B.A. Haskell, P.T. Fini, J.S. Speck, S. Nakamura

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 250 KB

english, 2007

19

Lattice parameters of bulk GaN fabricated by halide vapor phase epitaxy

V. Darakchieva, B. Monemar, A. Usui, M. Saenger, M. Schubert

Journal:

Journal of Crystal Growth

Year:

2008

Language:

english

File:

PDF, 496 KB

english, 2008

20

Very high epitaxial growth rate of SiC using MTS as chloride-based precursor

H. Pedersen, S. Leone, A. Henry, V. Darakchieva, E. Janzén

Journal:

Surface and Coatings Technology

Year:

2007

Language:

english

File:

PDF, 740 KB

english, 2007

21

Grazing incident asymmetric X-ray diffraction of β-FeSi2 layers, produced by ion beam synthesis

A. Atanassov, M. Baleva, V. Darakchieva, E. Goranova

Journal:

Year:

2004

Language:

english

File:

PDF, 208 KB

english, 2004

22

Growth and separation related properties of HVPE-GaN free-standing films

T Paskova, V Darakchieva, P.P Paskov, U Södervall, B Monemar

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 161 KB

english, 2002

23

Influence of grain size on the optical conductivity of β-FeSi2 layers

M Baleva, E Goranova, V Darakchieva, S Kossionides, M Kokkosis, P Jordanov

Journal:

Year:

2002

Language:

english

File:

PDF, 132 KB

english, 2002

24

Effect of rapid thermal annealing on the structure of ion beam synthesized β-FeSi2

V. Darakchieva, M. Surtchev, E. Goranova, M. Baleva

Journal:

Year:

2002

Language:

english

File:

PDF, 1.02 MB

english, 2002

25

Microhardness characterization of structures obtained by iron–silicon solid-state reaction

M. Baleva, V. Darakchieva, E. Goranova, E.P. Trifonova

Journal:

Materials Science and Engineering: B

Year:

2000

Language:

english

File:

PDF, 98 KB

english, 2000

26

Residual strain in HVPE GaN free-standing and re-grown homoepitaxial layers

V. Darakchieva, T. Paskova, P. P. Paskov, B. Monemar, N. Ashkenov, M. Schubert

Journal:

physica status solidi (a)

Year:

2003

Language:

english

File:

PDF, 226 KB

english, 2003

27

Optical investigation of AlGaN/GaN quantum wells and superlattices

B. Monemar, P. P. Paskov, H. Haradizadeh, J. P. Bergman, E. Valcheva, V. Darakchieva, B. Arnaudov, T. Paskova, P. O. Holtz, G. Pozina, S. Kamiyama, M. Iwaya, H. Amano, I. Akasaki

Journal:

physica status solidi (a)

Year:

2004

Language:

english

File:

PDF, 342 KB

english, 2004

28

Polar and nonpolar GaN grown by HVPE: Preferable substrates for nitride-based emitting devices

T. Paskova, P. P. Paskov, E. Valcheva, V. Darakchieva, J. Birch, A. Kasic, B. Arnaudov, S. Tungasmita, B. Monemar

Journal:

physica status solidi (a)

Year:

2004

Language:

english

File:

PDF, 269 KB

english, 2004

29

Infrared generalized ellipsometry on non-polar and superlattice group-III nitride films: strain and phonon anisotropy

Journal:

physica status solidi (a)

Year:

2008

Language:

english

File:

PDF, 1.32 MB

english, 2008

30

Free electron properties and hydrogen in InN grown by MOVPE

V. Darakchieva, M.-Y. Xie, D. Rogalla, H.-W. Becker, K. Lorenz, E. Alves, S. Ruffenach, M. Moret, O. Briot

Journal:

physica status solidi (a)

Year:

2011

Language:

english

File:

PDF, 246 KB

english, 2011

31

Unintentional incorporation of H and related structural and free-electron properties of c- and a-plane InN

V. Darakchieva, K. Lorenz, M.-Y. Xie, E. Alves, W. J. Schaff, T. Yamaguchi, Y. Nanishi, S. Ruffenach, M. Moret, O. Briot

Journal:

physica status solidi (a)

Year:

2012

Language:

english

File:

PDF, 339 KB

english, 2012

32

Growth of GaN on a-plane sapphire: in-plane epitaxial relationships and lattice parameters

T. Paskova, V. Darakchieva, E. Valcheva, P. P. Paskov, B. Monemar, M. Heuken

Journal:

physica status solidi (b)

Year:

2003

Language:

english

File:

PDF, 157 KB

english, 2003

33

Assessment of phonon mode characteristics via infrared spectroscopic ellipsometry on a-plane GaN

V. Darakchieva, T. Paskova, P. P. Paskov, H. Arwin, M. Schubert, B. Monemar, S. Figge, D. Hommel, B. A. Haskell, P. T. Fini, S. Nakamura

Journal:

physica status solidi (b)

Year:

2006

Language:

english

File:

PDF, 238 KB

english, 2006

34

Al1−xInxN/GaN bilayers: Structure, morphology, and optical properties

K. Lorenz, S. Magalhães, N. Franco, N. P. Barradas, V. Darakchieva, E. Alves, S. Pereira, M. R. Correia, F. Munnik, R. W. Martin, K. P. O'Donnell, I. M. Watson

Journal:

physica status solidi (b)

Year:

2010

Language:

english

File:

PDF, 835 KB

english, 2010

35

Phonons and free-carrier properties of binary, ternary, and quaternary group-III nitride layers measured by Infrared Spectroscopic Ellipsometry

A. Kasic, M. Schubert, J. Off, B. Kuhn, F. Scholz, S. Einfeldt, T. Böttcher, D. Hommel, D. J. As, U. Köhler, A. Dadgar, A. Krost, Y. Saito, Y. Nanishi, M. R. Correia, S. Pereira, V. Darakchieva, B. Mo

Journal:

physica status solidi (c)

Year:

2003

Language:

english

File:

PDF, 1.27 MB

english, 2003

36

Optical properties of undoped AlN/GaN superlattices grown by metalorganic vapor phase epitaxy

V. Darakchieva, P. P. Paskov, M. Schubert, T. Paskova, B. Monemar, S. Kamiyama, M. Iwaya, H. Amano, I. Akasaki

Journal:

physica status solidi (c)

Year:

2003

Language:

english

File:

PDF, 187 KB

english, 2003

37

Photoluminescence of GaN/AlN superlattices grown by MOCVD

P. P. Paskov, J. P. Bergman, V. Darakchieva, T. Paskova, B. Monemar, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 176 KB

english, 2005

38

Nonpolar a-plane HVPE GaN: growth and in-plane anisotropic properties

T. Paskova, V. Darakchieva, P. P. Paskov, J. Birch, E. Valcheva, P. O. Å. Persson, B. Arnaudov, S. Tungasmita, B. Monemar

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 164 KB

english, 2005

39

Bending in HVPE GaN free-standing films: effects of laser lift-off, polishing and high-pressure annealing

T. Paskova, V. Darakchieva, P. P. Paskov, B. Monemar, M. Bukowski, T. Suski, N. Ashkenov, M. Schubert, D. Hommel

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 233 KB

english, 2006

40

Anisotropy of the Γ-point effective mass and mobility in hexagonal InN

T. Hofmann, T. Chavdarov, V. Darakchieva, H. Lu, W. J. Schaff, M. Schubert

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 247 KB

english, 2006

41

Phonons in strained AlGaN/GaN superlattices

V. Darakchieva, B. Monemar, T. Paskova, S. Einfeldt, D. Hommel, S. Lourdudoss

Journal:

physica status solidi (c)

Year:

2007

Language:

english

File:

PDF, 253 KB

english, 2007

42

Strain and compositional analyses of Al-rich Al1–xInxN films grown by MOVPE: impact on the applicability of Vegard's rule

V. Darakchieva, M. Beckers, L. Hultman, M. Xie, B. Monemar, J.-F. Carlin, N. Grandjean

Journal:

physica status solidi (c)

Year:

2008

Language:

english

File:

PDF, 184 KB

english, 2008

43

DAP emission band in a carbon doped (1-101)GaN grown on (001)Si substrate

Yoshio Honda, Toshiki Hikosaka, Masahito Yamaguchi, Nobuhiko Sawaki, Galia Pozina, Fredrik Karlsson, Vanya Darakchieva, Plamen Paskov, Bo Monemar

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 863 KB

english, 2009

44

Optical properties of InN/In0.73Ga0.27N multiple quantum wells studied by spectroscopic ellipsometry

N. Ben Sedrine, V. Darakchieva, D. Lindgren, B. Monemar, S. B. Che, Y. Ishitani, A. Yoshikawa

Journal:

physica status solidi (c)

Year:

2011

Language:

english

File:

PDF, 305 KB

english, 2011

45

Hydride vapor-phase epitaxial GaN thick films for quasi-substrate applications: Strain distribution and wafer bending

T. Paskova, V. Darakchieva, E. Valcheva, P. P. Paskov, I. G. Ivanov, B. Monemar, T. Böttcher, C. Roder, D. Hommel

Journal:

Journal of Electronic Materials

Year:

2004

Language:

english

File:

PDF, 237 KB

english, 2004

46

Optical Hall Effect in Hexagonal InN

T. Hofmann, V. Darakchieva, B. Monemar, H. Lu, W.J. Schaff, M. Schubert

Journal:

Journal of Electronic Materials

Year:

2008

Language:

english

File:

PDF, 625 KB

english, 2008

47

The (3He, tf) as a surrogate reaction to determine (n, f) cross sections in the 10–20 MeV energy range

M.S. Basunia, R.M. Clark, B.L. Goldblum, L.A. Bernstein, L. Phair, J.T. Burke, C.W. Beausang, D.L. Bleuel, B. Darakchieva, F.S. Dietrich, M. Evtimova, P. Fallon, J. Gibelin, R. Hatarik, C.C. Jewett, S

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

2009

Language:

english

File:

PDF, 607 KB

english, 2009

48

Generalized infrared ellipsometry study of thin epitaxial AlN layers with complex strain behavior

V. Darakchieva, M. Schubert, J. Birch, A. Kasic, S. Tungasmita, T. Paskova, B. Monemar

Journal:

Physica B: Condensed Matter

Year:

2003

Language:

english

File:

PDF, 555 KB

english, 2003

49

In-plane epitaxial relationships between a-plane sapphire substrates and GaN layers grown by different techniques

T. Paskova, V. Darakchieva, E. Valcheva, P.P. Paskov, B. Monemar, M. Heuken

Journal:

Journal of Crystal Growth

Year:

2003

Language:

english

File:

PDF, 338 KB

english, 2003

50

About the possible diminution of the sp3 C presence along with the increase of the nitrogen enclosure in the CNxthin films produced by reactive pulsed laser deposition

E. György, I. N. Mihailescu, M. Baleva, E. P. Trifonova, M. Abrashev, V. Darakchieva, A. Zocco, A. Perrone

Journal:

Journal of Materials Science

Year:

2001

Language:

english

File:

PDF, 83 KB

english, 2001